technical data pnp silicon low power transistor qualified per mil - prf - 19500/354 devices qualified level 2N2604 2n2605 jan , jantx jantxv maximum ratings ratings symbol 2N2604 2n2605 units collector - base voltage v cbo 80 70 vdc collector - emitt er voltage v ceo 60 vdc emitter - base voltage v ebo 6.0 vdc collector current i c 30 madc total power dissipation @ t a = +25 0 c (1) p t 400 mw/ 0 c operating & storage junction temperature range t j , t stg - 65 to +200 0 c thermal characteristics characteristi cs symbol max. unit thermal resistance, junction - to - case r q jc 0.437 0 c/m w 1) derate linearly 2.28 mw/ 0 c above t a = +25 0 c to - 46* (to - 206ab) *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) charac teristics symbol min. max. unit off characteristics collector - base breakdown voltage i c = 10 m adc 2N2604 2n2605 v (br)cbo 80 70 vdc collector - emitter breakdown voltage i c = 10 madc v (br)ceo 60 vdc emitter - base breakdown current i e = 10 m adc v (br)ebo 6.0 vdc collector - base cutoff current v cb = 50 vdc i cbo 10 h adc emitter - base cutoff current v eb = 5.0 vdc i ebo 2.0 h adc collector - emitter cutoff current v ce = 50 vdc i ces 10 h adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2N2604, 2n2605 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (2) forward - current transfer ratio i c = 10 m adc, v ce = 5.0 vdc 2N2604 2n2605 i c = 500 m adc, v ce = 5.0 vdc 2N2604 2n2605 i c = 10 madc, v ce = 5.0 vdc 2N2604 2n2605 h fe 40 100 60 150 40 100 120 300 180 450 160 400 collector - emitter saturation volta ge i c = 10 madc, i b = 500 m adc v ce(sat) 0.3 vdc base - emitter saturation voltage i c = 10 madc, i b = 500 m adc v be(sat) 0.7 0.9 vdc dynamic characteristics small - signal short - circuit input impedance i c = 1.0 madc, v cb = 5.0 vdc, f = 1.0 khz 2N2604 2n2605 h ie 1.0 2.0 10 20 k w small - signal open - circuit output admittance i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz 2N2604 2n2605 h oe 40 60 m mhos small - signal short - circuit forward current transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f= 1.0 khz 2N2604 2n2605 h fe 60 150 180 450 magnitude of small - signal forward current transfer ratio i c = 0.5 madc, v ce = 5.0 vdc, f = 30 mhz ? h fe ? 1.0 8.0 output capacitance v cb = 5.0 vdc, i e = 0, 100 khz f 1.0 mhz c obo 6.0 pf noise figure v ce = 5.0 vdc, i c = 10 m adc, r g = 10 k w , f = 100 hz v ce = 5.0 vdc, i c = 10 m adc, r g = 10 k w , f = 1.0 khz v ce = 5.0 vdc, i c = 10 m adc, r g = 10 k w , f = 10 khz f 1 f 2 f 3 5.0 3.0 3.0 db (2) pulse test: pulse width = 300 m s, duty cycle 2. 0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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